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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION With TO-126 package Complement to type BD234 /236 /238 APPLICATIONS For medium power linear and switching applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
BD233 BD235 BD237
Absolute maximum ratings (Ta=25ae )
SYMBOL
VCBO

PARAMETER
CONDITIONS
BD233 BD235
Collector-base voltage
VCEO
HAN INC
Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature
BD237 BD233 BD235
SEM GE
Open emitter Open base
OND IC
TOR UC
VALUE 45 60 100 45 60 80
UNIT
V
V
BD237 VEBO IC ICM PC Tj Tstg Open collector
5 2 6
V A A W ae ae
TC=25ae
25 150 -65~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage BD233 VCEO(SUS) Collector-emitter sustaining voltage BD235 BD237 BD233 ICBO Collector cut-off current BD235 BD237 VCB=45V; IE=0 VCB=60V; IE=0 VCB=100V; IE=0 VEB=5V; IC=0 IC=0.1A; IB=0 CONDITIONS IC=1A; IB=0.1A IC=1A ; VCE=2V
BD233 BD235 BD237
SYMBOL VCEsat VBE
MIN
TYP.
MAX 0.6 1.3
UNIT V V
45 60 80 V
100
|I
A
IEBO hFE-1 hFE-2 fT
Emitter cut-off current DC current gain DC current gain

Transition frequency
HAN INC
SEM GE
IC=150mA ; VCE=2V IC=1A ; VCE=2V
OND IC
40 25 3
TOR UC
1
mA
IC=250mA; VCE=10V
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BD233 BD235 BD237
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions
3


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